Large open‐circuit voltage boosting of pure sulfide chalcopyrite Cu(In,Ga)S2 prepared using Cu‐deficient metal precursors,Progress in Photovoltaics

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Large open‐circuit voltage boosting of pure sulfide chalcopyrite Cu(In,Ga)S2 prepared using Cu‐deficient metal precursors
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-05-03 , DOI: 10.1002/pip.3277
Shinho Kim ₁ , Takehiko Nagai ₁ , Hitoshi Tampo ₁ , Shogo Ishizuka ₁ , Hajime Shibata ₁

Affiliation

We performed a comparative study to find out the reasons why it is necessary to prepare the pure sulfide chalcopyrite, Cu(InGa)S₂ (CIGS) under a Cu‐deficient condition to improve solar cell performance. It has been shown that CIGS that was grown under Cu‐deficient condition exhibits large open‐circuit voltage (V_OC) boosting compared with that the one grown under Cu‐excess condition. Thus, CIGS were prepared from Cu‐excess and Cu‐deficient metal precursor (MP) and characterized concerning the origins of the different V_OC. We observed that CIGS prepared using Cu‐excess MP suffered large recombination at buffer/CIGS interface and in bulk, which resulted in serious limitation of the V_OC. On the other hand, CIGS prepared from Cu‐deficient MP exhibited largely improved V_OC with reduced recombination. We conducted defect analysis using the photoluminescence (PL) method, and CIGS prepared using Cu‐excess MP exhibited strong deep emissions. However, CIGS prepared from Cu‐deficient MP exhibited PL emission characteristics without deep level transition. This implies that a large number of deep level defects exist in the CIGS prepared using Cu‐excess MP, and this might be the reason for the large recombination limiting V_OC of the device. Finally, we also present the reason for deep levels in the CIGS prepared using Cu‐excess MP.

中文翻译：

使用贫铜金属前驱体制备的纯硫化黄铜矿Cu（In，Ga）S2的大开路电压提升

我们进行了一项比较研究，以找出为什么必须在缺铜条件下制备纯硫化物黄铜矿Cu（InGa）S ₂（CIGS）的原因，以改善太阳能电池的性能。研究表明，与在铜过量条件下生长的CIGS相比，在铜缺乏条件下生长的CIGS具有较大的开路电压（V _OC）升高。因此，CIGS是由过量铜和缺乏铜的金属前体（MP）制备的，并针对不同V _OC的来源进行了表征。我们观察到，使用铜过量MP制备的CIGS在缓冲液/ CIGS界面处和大量混合时发生大量重组，从而严重限制了V _OC。另一方面，由铜缺乏的MP制备的CIGS表现出很大的V _OC降低了重组。我们使用光致发光（PL）方法进行了缺陷分析，使用铜过量MP制备的CIGS表现出很强的深发射。但是，由铜缺乏的MP制备的CIGS表现出PL发射特性，而没有深层跃迁。这意味着使用铜过量MP制备的CIGS中存在大量深层缺陷，这可能是器件大量重组限制了V _OC的原因。最后，我们还介绍了使用铜过量MP制备的CIGS中存在高水平的原因。

更新日期：2020-05-03

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