We report the investigation of BiFeO₃ and Y₂O₃ gate stack for the metal-ferroelectric-insulator-field-effect-transistors (MFIS-FET) for nonvolatile memory applications deposited by sputtering. X-Ray diffraction and electrical characterization have been carried out to investigate the structural and ferroelectric characteristics respectively of the deposited individual films and their stack. Structural investigation reveals the crystallized BiFeO₃ film with pervoskite phase upon annealing. Memory improvement with the introduction of dielectric layer from 3.8 V in the metal-ferroelectric-silicon structure to 7.97 V in the MFIS structure with 8 nm buffer layer has been observed. The MFIS structure shows fatigue free characteristics with high data retention time.

我们报告了BiFeO ₃和Y ₂ O ₃栅堆叠的研究，该堆叠用于通过溅射沉积的非易失性存储应用的金属铁电绝缘体场效应晶体管（MFIS-FET）。已经进行了X射线衍射和电学表征以分别研究沉积的单个膜及其堆叠的结构和铁电特性。结构研究表明结晶的BiFeO ₃退火后具有白云母相的薄膜。已经观察到通过将介电层从金属-铁电-硅结构中的3.8 V引入到具有8 nm缓冲层的MFIS结构中的7.97 V来改善存储器性能。MFIS结构显示出无疲劳特性，并具有很高的数据保留时间。