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Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics
Nano-Micro Letters ( IF 31.6 ) Pub Date : 2020-05-04 , DOI: 10.1007/s40820-020-00439-9 Feng Li 1 , Tao Shen 2 , Cong Wang 1 , Yupeng Zhang 1 , Junjie Qi 2 , Han Zhang 1
Nano-Micro Letters ( IF 31.6 ) Pub Date : 2020-05-04 , DOI: 10.1007/s40820-020-00439-9 Feng Li 1 , Tao Shen 2 , Cong Wang 1 , Yupeng Zhang 1 , Junjie Qi 2 , Han Zhang 1
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AbstractSection Highlights
中文翻译:
用于自适应电子和光电子的应变感应压电和压阻效应工程二维半导体的最新进展
摘要部分亮点
更新日期:2020-05-04
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A comprehensive review of strain-engineered 2D semiconductors in electronics and optoelectronics. The basic theories and simulation studies of strain introduced piezoelectric effect and piezoresistive effect have been summarized.
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The various experimental methods for study strain-engineered 2D semiconductors have been highlighted.
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The applications of strain sensor, strain tuning the performance of photodetector and piezoelectric nanogenerator have been reviewed.
中文翻译:
用于自适应电子和光电子的应变感应压电和压阻效应工程二维半导体的最新进展
摘要部分亮点
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对电子和光电子领域应变工程二维半导体的全面回顾。总结了应变引入压电效应和压阻效应的基本理论和仿真研究。 -
重点介绍了研究应变工程二维半导体的各种实验方法。 -
综述了应变传感器、应变调谐光电探测器和压电纳米发电机的应用。