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“Top-down” and “bottom-up” strategies for wafer-scaled miniaturized gas sensors design and fabrication
Microsystems & Nanoengineering ( IF 7.3 ) Pub Date : 2020-05-04 , DOI: 10.1038/s41378-020-0144-4
Lin Liu 1, 2 , Yingyi Wang 1, 3 , Fuqin Sun 3 , Yanbing Dai 3 , Shuqi Wang 3 , Yuanyuan Bai 3 , Lianhui Li 3 , Tie Li 3 , Ting Zhang 3 , Sujie Qin 1
Affiliation  

Manufacture of large-scale patterned nanomaterials via top-down techniques, such as printing and slurry coating, have been used for fabrication of miniaturized gas sensors. However, the reproducibility and uniformity of the sensors in wafer-scale fabrication are still a challenge. In this work, a “top-down” and “bottom-up” combined strategy was proposed to manufacture wafer-scaled miniaturized gas sensors with high-throughput by in-situ growth of Ni(OH)2 nanowalls at specific locations. First, the micro-hotplate based sensor chips were fabricated on a two-inch (2”) silicon wafer by micro-electro-mechanical-system (MEMS) fabrication techniques (“top-down” strategy). Then a template-guided controllable de-wetting method was used to assemble a porous thermoplastic elastomer (TPE) thin film with uniform micro-sized holes (relative standard deviation (RSD) of the size of micro-holes <3.5 %, n > 300), which serves as the patterned mask for in-situ growing Ni(OH)2 nanowalls at the micro-hole areas (“bottom-up” strategy). The obtained gas microsensors based on this strategy showed great reproducibility of electric properties (RSD < 0.8%, n = 8) and sensing response toward real-time H2S detection (RSD < 3.5%, n = 8).



中文翻译:

晶圆级微型气体传感器设计和制造的“自上而下”和“自下而上”策略

通过自上而下的技术(例如印刷和浆料涂布)制造大规模图案化纳米材料已被用于制造微型气体传感器。然而,晶圆级制造中传感器的再现性和均匀性仍然是一个挑战。在这项工作中,提出了一种“自上而下”和“自下而上”的组合策略,通过 Ni(OH) 2 的原位生长来制造具有高通量的晶圆级小型化气体传感器。特定位置的纳米壁。首先,基于微热板的传感器芯片通过微机电系统 (MEMS) 制造技术(“自上而下”策略)在两英寸(2”)硅晶片上制造。然后采用模板引导的可控去湿方法组装具有均匀微孔(微孔尺寸的相对标准偏差(RSD)<3.5%,n  >300 )的多孔热塑性弹性体(TPE)薄膜。),用作在微孔区域原位生长 Ni(OH) 2纳米壁的图案化掩模(“自下而上”策略)。基于该策略获得的气体微传感器显示出良好的电学特性重现性(RSD < 0.8%,n  = 8)和对实时 H 2 的传感响应S 检测(RSD < 3.5%,n  = 8)。

更新日期:2020-05-04
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