Gallium nitride (GaN) is a promising candidate for power applications, due to its superior electrical properties such as high critical breakdown field and saturation drift velocity. The recent emergence of GaN substrates with low defect densities has made it feasible to develop efficient vertical GaN power diodes. However, the breakdown voltage of these diodes is far from the theoretical value, due to the lack of suitable edge termination techniques in GaN such as junction termination extension (JTE). This is attributed to the processing challenges in fabricating GaN power diodes where it is difficult to form p-type regions through implantation. This work addresses this challenge and proposes the design, optimization, and a comprehensive design methodology for implantation-free, edge termination techniques such as field plate (FP), single and multi-etch JTE, and a hybrid FP-JTE structure, suitable for vertical GaN diodes. The proposed approaches demonstrate that close to theoret...

中文翻译：

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垂直GaN功率二极管中的无注入边缘终端结构

氮化镓（GaN）具有出色的电特性，例如高临界击穿场和饱和漂移速度，因此是功率应用的有前途的候选者。具有低缺陷密度的GaN衬底的最新出现使得开发有效的垂直GaN功率二极管成为可能。但是，由于缺乏合适的GaN边缘终止技术（例如结终止扩展（JTE）），这些二极管的击穿电压与理论值相差甚远。这归因于制造GaN功率二极管时的处理挑战，其中难以通过注入形成p型区域。这项工作解决了这一挑战，并提出了针对无植入边缘终止技术（例如场板（FP））的设计，优化和综合设计方法，单蚀刻和多蚀刻JTE，以及混合FP-JTE结构，适用于垂直GaN二极管。拟议的方法证明了这一点接近理论。