In micro–nano manufacturing, the deposition rate is one of the most basic parameters for the preparation of the film. In this paper, we use the tungsten–rhenium (W-5Re and W-26Re) alloy thin films as the research object and choose direct current (DC) magnetron sputtering to fabricate films on the alumina substrate. With the help of three factors and three levels of an orthogonal table, nine orthogonal experiments are designed to study the influences of argon flow rate, sputtering power and vacuum degree on the deposition rate. Thickness and composition are measured by scanning electron microscopy and x-ray diffraction respectively. In order to maintain the integrity of the film, the deposition thickness of the film is controlled by simulation so that the thermal stress is within the required range. In addition, the thermoelectric output is improved by comparing tungsten-rhenium thin film thermocouples (TFTCs) with different deposition rates. Experimental results show that sputte...

中文翻译：

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直流磁控溅射成膜速率对钨hen薄膜热电偶热电输出的影响

在微纳米制造中，沉积速率是制备薄膜的最基本参数之一。在本文中，我们以钨hen（W-5Re和W-26Re）合金薄膜为研究对象，并选择直流（DC）磁控溅射在氧化铝基体上制备薄膜。借助三个因素和三个水平的正交表，设计了九个正交实验来研究氩气流量，溅射功率和真空度对沉积速率的影响。厚度和组成分别通过扫描电子显微镜和X射线衍射测量。为了保持膜的完整性，通过模拟来控制膜的沉积厚度，使得热应力在所需范围内。此外，通过比较具有不同沉积速率的钨-薄膜热电偶（TFTC），可以提高热电输出。实验结果表明，喷...