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Tribological, Thermal and Kinetic Characterization of SiO 2 and Si 3 N 4 Polishing for STI CMP on Blanket and Patterned Wafers
ECS Journal of Solid State Science and Technology ( IF 1.8 ) Pub Date : 2020-05-03 , DOI: 10.1149/2162-8777/ab89bc
Juan Cristobal Mariscal 1 , Jeffrey McAllister 1 , Yasa Sampurno 1, 2 , Jon Sierra Suarez 3 , Mark O’Neill 4 , Hongjun Zhou 4 , Malcolm Grief 4 , Dave Slutz 5 , Ara Philipossian 1, 2
Affiliation  

We investigated the tribological, thermal and kinetic aspects of SiO 2 and Si 3 N 4 polishing on blanket and patterned wafers for STI CMP. Results showed the absence of anomalous tribological vibrational behaviors thanks to synergies between the colloidal CeO 2 -based slurry and application-specific conditioner. Removal rates for the two processes showed non-Prestonian behavior as both mechanical and chemical factors were at work. However, Si 3 N 4 was much more non-Prestonian than SiO 2 . As expected, Si 3 N 4 polishing resulted in COF values that were approximately one-half of their SiO 2 counterparts resulting in high SiO 2 -Si 3 N 4 removal rate selectivity. A modified Langmuir-Hinshelwood model was used to simulate removal rates allowing us to conclude that the process was mechanically-limited for SiO 2 and highly chemically-limited for ...

中文翻译:

SiO 2和Si 3 N 4的覆盖,图案化晶圆的STI CMP抛光的摩擦学,热学和动力学表征

我们研究了在STI CMP的毯式和有图​​案晶片上SiO 2和Si 3 N 4抛光的摩擦学,热学和动力学方面。结果表明,由于基于胶体的CeO 2的浆料和特定应用的调理剂之间的协同作用,因此没有异常的摩擦振动行为。由于机械和化学因素都在起作用,这两个过程的去除率均显示出非Prestonian行为。但是,Si 3 N 4比SiO 2更具非Prestonian弹性。如所预期的,Si 3 N 4抛光产生的COF值约为其SiO 2对应物的一半,从而导致较高的SiO 2 -Si 3 N 4去除速率选择性。修改后的Langmuir-Hinshelwood模型用于模拟去除速率,使我们可以得出结论:该过程对SiO 2受机械限制,而对SiO 2受高度化学限制。
更新日期:2020-05-03
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