We investigated the tribological, thermal and kinetic aspects of SiO 2 and Si 3 N 4 polishing on blanket and patterned wafers for STI CMP. Results showed the absence of anomalous tribological vibrational behaviors thanks to synergies between the colloidal CeO 2 -based slurry and application-specific conditioner. Removal rates for the two processes showed non-Prestonian behavior as both mechanical and chemical factors were at work. However, Si 3 N 4 was much more non-Prestonian than SiO 2 . As expected, Si 3 N 4 polishing resulted in COF values that were approximately one-half of their SiO 2 counterparts resulting in high SiO 2 -Si 3 N 4 removal rate selectivity. A modified Langmuir-Hinshelwood model was used to simulate removal rates allowing us to conclude that the process was mechanically-limited for SiO 2 and highly chemically-limited for ...

中文翻译：

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SiO 2和Si 3 N 4的覆盖，图案化晶圆的STI CMP抛光的摩擦学，热学和动力学表征

我们研究了在STI CMP的毯式和有图​​案晶片上SiO 2和Si 3 N 4抛光的摩擦学，热学和动力学方面。结果表明，由于基于胶体的CeO 2的浆料和特定应用的调理剂之间的协同作用，因此没有异常的摩擦振动行为。由于机械和化学因素都在起作用，这两个过程的去除率均显示出非Prestonian行为。但是，Si 3 N 4比SiO 2更具非Prestonian弹性。如所预期的，Si 3 N 4抛光产生的COF值约为其SiO 2对应物的一半，从而导致较高的SiO 2 -Si 3 N 4去除速率选择性。修改后的Langmuir-Hinshelwood模型用于模拟去除速率，使我们可以得出结论：该过程对SiO 2受机械限制，而对SiO 2受高度化学限制。