In this study, crystalline cobalt ferrite thin films with large Faraday rotation (FR) coefficient were deposited on silicon by radiofrequency magnetron sputtering. An (100)-oriented MgO buffer layer was employed to solve the film/substrate discrepancy. A giant FR coefficient of 25 600 deg cm −1 was achieved for a cobalt ferrite film deposited at a substrate temperature (ST) of 600 °C. Moreover, the magnetic easy axis of the films switched from in-plane (IP) to out-of-plane orientation with increasing ST. This switching in the easy axis could be attributed to induced IP stress in the films with high deposition temperatures.

中文翻译：

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硅光子不可逆器件应用中沉积在硅基板上的钴铁氧体薄膜的巨型法拉第旋转

在这项研究中，具有大法拉第旋转（FR）系数的结晶钴铁氧体薄膜通过射频磁控溅射沉积在硅上。采用（100）取向的MgO缓冲层来解决薄膜/基材的差异。对于在600℃的衬底温度（ST）下沉积的钴铁氧体膜，获得了25 600 deg cm -1的巨FR系数。此外，随着ST的增加，薄膜的易磁轴从平面内（IP）切换到平面外取向。易轴上的这种切换可归因于在具有高沉积温度的膜中引起的IP应力。