The electronic and magnetic properties of the doped GeC by Cr and Mn are studied using the Koringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA). We have determined the nature of the forbidden band gap and investigated the metallic character when the doping is made by the chromium and the manganese. On the other hand, although the doping is above the percolation threshold, the total magnetic moment for Ge_{1 − 0.25}TM_0.25C is 0.491 and 0.67 μ_B for Cr and Mn, respectively. Besides, the polarization as well as the main responsible source of magnetism in the system is determined. Finally, using the mean field theory, the Curie temperature T_C is estimated for different concentrations. It was found that the effect of doping with Mn had a significant impact on T_C since it exceeded the room temperature. The findings of this work suggest GeC-based diluted magnetic semiconductors as potential materials for electronics applications.

中文翻译：

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Cr和Mn掺杂GeC锌共混物的增强的电磁性能

利用Koringa-Kohn-Rostoker（KKR）方法结合相干势近似（CPA）研究了Cr和Mn掺杂的GeC的电子和磁性。我们已经确定了禁带宽度的性质，并研究了铬和锰掺杂时的金属特性。在另一方面，虽然掺杂高于逾渗阈值，为对总磁矩ģ ë _{1 - 0.25} Ť中号_0.25 Ç是0.491和0.67 μ_乙用于分别的Cr和Mn。此外，还确定了系统中的极化以及主要的磁性来源。最后，根据平均场论，居里温度T估算了不同浓度的_C。结果发现，与锰掺杂的效果有一个显著的影响牛逼_Ç，因为它超过了室温。这项工作的发现表明，基于GeC的稀释磁性半导体可作为电子应用的潜在材料。