A high conversion efficiency of 20.2% is achieved for simple structured-Si solar cells without a conventional anti-reflection layer. The ultralow-reflectance less than ∼3% is achieved by formation of a nanocrystalline Si (nc-Si) layer using the surface structure chemical transfer (SSCT) method which takes only 15 s. The nc-Si layer is passivated by phosphosilicate glass, while the rear Si surface is passivated by boron back-surface-field (B-BSF). By optimizing diffusion conditions, a high short-circuit current density of 41.8 mAcm −2 and improvement of an open-circuit voltage are achieved owing to enhancement of B-BSF and suppression of Auger recombination in the phosphorus-doped nc-Si layer.

中文翻译：

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通信—增强硼后表面场并抑制俄歇复合，以改善超低反射率硅太阳能电池

对于没有常规抗反射层的简单结构化Si太阳能电池，可实现20.2％的高转换效率。通过使用仅需15 s的表面结构化学转移（SSCT）方法形成纳米晶体Si（nc-Si）层，即可获得低于约3％的超低反射率。nc-Si层被磷硅酸盐玻璃钝化，而背面Si表面被硼背面电场（B-BSF）钝化。通过优化扩散条件，由于B-BSF的增强和磷掺杂nc-Si层中俄歇复合的抑制，实现了41.8mAcm -2的高短路电流密度和开路电压的改善。