The deep levels in amorphous Ge 0.5 Se 0.5 layers have been analyzed by Deep Level Transient Spectroscopy (DLTS). To that end, Metal-Insulator-Semiconductor (MIS) capacitors have been prepared by Physical Vapor Deposition of the films on p-type silicon substrates. A so-called quasi-constant capacitance procedure has been developed to account for the strong flat-band voltage shift of the capacitance-voltage characteristic with temperature. Applying this procedure to the as-deposited layers in the subthreshold regime reveals a dominant broad hole trap, with deep level parameters (trap concentration, hole capture cross section and activation energy) that strongly depend on the deposition conditions and the layer thickness. It is, finally, shown that the trap filling behavior does not follow the capture kinetics for simple point defects. Based on this observation, arguments are presented for an alternative analysis of the DLTS data.

中文翻译：

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航空电子阈值开关选择器的基于Ge x Se 1-x的层中空穴陷阱的深层瞬态光谱研究。

非晶态Ge 0.5 Se 0.5层中的深能级已通过深能级瞬态光谱法（DLTS）进行了分析。为此，已经通过在p型硅衬底上的物理气相沉积膜来制备金属-绝缘体-半导体（MIS）电容器。已经开发出一种所谓的准恒定电容程序来解决电容-电压特性随温度的强烈平带电压偏移。在亚阈值范围内将这一程序应用于沉积层时，揭示了一个占主导地位的宽空穴阱，其深水平参数（阱浓度，空穴俘获截面和活化能）在很大程度上取决于沉积条件和层厚。最后，表明对于简单的点缺陷，陷阱的填充行为并不遵循捕获动力学。