A new scalable small-signal model for 0.1 μm AlGaN/GaN HEMT up to 110 GHz is presented in this paper. The taps between the gate/drain manifold and fingers on the device has been investigated and included in the equivalent circuit. In addition, to ensure high scalability, a set of scaling rules are presented. A novel extraction procedure for extrinsic capacitances using full-wave electromagnetic (FW-EM) method has been introduced along with corresponding structures used for EM simulation. The nonlinear dependence of the extrinsic inductances on the gate-width has been accounted for by a new scaling rule, which can be used to extract their value from measurement data. To guarantee the stability of the scaling coefficients, two devices with different gate-width have been utilized for their generation. The proposed scalable model has been verified using 0.1 μm AlGaN/GaN HEMT devices with different gate-widths and different gate-fingers. The experiment results show good agreement between model and measurement S-parameters up to 110 GHz.

中文翻译：

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一种基于 FW-EM 的毫米波可扩展小信号建模方法，适用于高达 110 GHz 的 AlGaN/GaN HEMT

本文介绍了一种用于频率高达 110 GHz 的 0.1 μm AlGaN/GaN HEMT 的新型可扩展小信号模型。设备上的栅极/排水歧管和指状物之间的抽头已经过研究并包含在等效电路中。此外，为了保证高扩展性，提出了一套扩展规则。介绍了使用全波电磁 (FW-EM) 方法提取外在电容的新方法以及用于 EM 模拟的相应结构。外部电感对栅极宽度的非线性依赖性已由新的缩放规则解释，该规则可用于从测量数据中提取它们的值。为了保证缩放系数的稳定性，使用了两种不同栅极宽度的器件来生成它们。已使用具有不同栅极宽度和不同栅极指状结构的 0.1 μm AlGaN/GaN HEMT 器件验证了所提出的可扩展模型。实验结果表明，高达 110 GHz 的模型和测量 S 参数之间具有良好的一致性。