We present the fabrication process and characterization of a tunnel magnetoresistance sensor-based monolithic device assembled in Wheatstone bridge architecture, capable of measuring magnetic fields in both planar-sensitive directions simultaneously. This process is simplified in comparison with other fabrication strategies, as it does not require annealing or the usage of auxiliary structures to achieve two-dimensional sensitivity, by using amorphous Al2Ox tunnel barriers combined with Ni-Fe and Co-Fe-B electrodes and Mn-Ir as bias exchange material to define sensor sensitivity to orthogonal directions in the wafer plane. The fabrication process achieved a maximum sensitivity of 16.1 mV/(V·mT). A proof-of-concept device as an angular sensor was fabricated, achieving an rms error of 1.5°.

中文翻译：

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二维磁力计中隧道磁阻传感器单片集成的简化过程


我们介绍了在惠斯通电桥架构中组装的基于隧道磁阻传感器的单片器件的制造过程和表征，该器件能够同时测量两个平面敏感方向上的磁场。与其他制造策略相比，该工艺得到了简化，因为它不需要退火或使用辅助结构来实现二维灵敏度，而是使用非晶 Al2Ox 隧道势垒与 Ni-Fe 和 Co-Fe-B 电极以及 Mn 相结合-Ir 作为偏置交换材料，用于定义传感器对晶圆平面正交方向的灵敏度。该制造工艺实现了16.1 mV/(V·mT)的最大灵敏度。制造了一个作为角度传感器的概念验证设备，实现了 1.5° 的均方根误差。