A 130 GHz fully-integrated fundamental-frequency transmitter (TX) module with 4.4 dBm single-ended measured output power in a 130 nm SiGe technology is presented. The transmitter achieves in measurement a phase noise of −88 dBc/Hz at 1 MHz offset frequency from a 130 GHz carrier and a tuning range of 17 GHz. Its relatively compact size, low power consumption and high output power, enables the TX module to be integrated into more complex D-Band transceiver modules for radar and imaging applications. Due to the available measurement equipment, it was only possible to measure the output power single-ended. The measured single-ended output power is 4.4 dBm. This corresponds well to a simulated maximum differential output power of 8.1 dBm. To the best of the author’s knowledge, the presented chip exhibits one of the highest output power for fundamental-frequency TX modules among the recently reported state-of-the art chips in this frequency range.

中文翻译：

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具有 > 4 dBm 单端输出功率的 130 GHz 全集成基频 D 波段发射机模块

介绍了 130 GHz 全集成基频发射机 (TX) 模块，采用 130 nm SiGe 技术，单端测量输出功率为 4.4 dBm。在 130 GHz 载波和 17 GHz 调谐范围的 1 MHz 偏移频率下，发射机在测量中实现了 −88 dBc/Hz 的相位噪声。其相对紧凑的尺寸、低功耗和高输出功率使 TX 模块能够集成到更复杂的 D 波段收发器模块中，用于雷达和成像应用。由于可用的测量设备，只能单端测量输出功率。测得的单端输出功率为 4.4 dBm。这很好地对应于 8.1 dBm 的模拟最大差分输出功率。据作者所知，