High‐performance vacuum‐processed metal oxide thin‐film transistors: A review of recent developments,Journal of the Society for Information Display

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High‐performance vacuum‐processed metal oxide thin‐film transistors: A review of recent developments
Journal of the Society for Information Display ( IF 1.7 ) Pub Date : 2020-04-27 , DOI: 10.1002/jsid.886
Hee Jun Kim ₁ , Kyungho Park ₁ , Hyun Jae Kim ₁

Affiliation

Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the publication of more than 1,300 related papers. Although the number of researches on oxide semiconductors has continued to increase year by year, the average field‐effect mobility of oxide semiconductor thin‐film transistors (TFTs) has not shown significant improvement; from 2010 to 2018; the average field‐effect mobility of vacuum‐processed n‐type oxide TFTs is around 20 cm²/Vs. To investigate the obstacles for performance improvements, the latest progress and researches on vacuum‐processed oxide semiconductor TFTs for high performance over the past decade are highlighted, along with the pros and cons of each technology. Finally, complementary metal oxide semiconductor (CMOS) logic circuits composed of both n‐ and p‐type oxide semiconductor TFTs are introduced, and future prospects for this state‐of‐the‐art research on the oxide semiconductors are presented.

中文翻译：

高性能真空处理的金属氧化物薄膜晶体管：最新进展综述

自2010年以来，随着1300多个相关论文的发表，真空处理的氧化物半导体得到了极大的改善。尽管对氧化物半导体的研究数量一直在逐年增加，但是氧化物半导体薄膜晶体管（TFT）的平均场效应迁移率并未显示出明显的改善。从2010年到2018年；真空处理的n型氧化物TFT的平均场效应迁移率约为20 cm ²/ Vs。为了调查性能改进的障碍，着重介绍了过去十年中用于高性能的真空处理氧化物半导体TFT的最新进展和研究，以及每种技术的利弊。最后，介绍了由n型和p型氧化物半导体TFT组成的互补金属氧化物半导体（CMOS）逻辑电路，并提出了对氧化物半导体的最新研究的未来前景。

更新日期：2020-04-27

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