The paper presents a study of 5‐MeV energy Au⁺ ion implantation in polar c‐plane (0001), nonpolar a‐plane (11‐20) and m‐plane (10–10) ZnO crystallographic cuts using fluences of 5 × 10¹⁴ and 1 × 10¹⁵ cm⁻². The implanted samples were subsequently annealed in O₂ atmosphere at 600°C. It was shown that a‐plane ZnO exhibited a lowest level of Zn sublattice disorder evidenced by Rutherford backscattering spectroscopy in channelling mode (RBS‐C); in contrast, m‐plane ZnO showed the highest disorder. The disorder in the Zn sublattice grew progressively in the subsurface as well as in the implanted layer in c‐plane and m‐plane ZnO, while a‐plane has shown slight increase of disorder just in the implanted layer. Angular scans provided using RBS‐C have shown the preservation of channelling effect in the subsurface layer in a‐plane ZnO. On the contrary, the narrowed and shallow angular scan dips were seen in m‐plane ZnO. Raman spectroscopy has shown significant O‐sublattice disorder and O rearrangement mainly in a‐plane and m‐plane ZnO compared to c‐plane. After ion implantation, the exciton‐related luminescence band at 375 nm vanished almost completely, and the defect‐related band ‘shifted’ to shorter wavelengths. Annealing has beneficial influence on near‐band‐edge (NBE) luminescence recovery, whereas deep‐level‐emission (DLE) luminesce has been shifted to lower wavelengths than appeared after implantation.

中文翻译：

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极性和非极性ZnO的高能Au +离子注入—结构修饰和光学性质

本文介绍了使用5×10的注量在极性c平面（0001），非极性a平面（11-20）和m平面（10-10）ZnO晶体切口中进行5MeV能量Au ⁺离子注入的研究。¹⁴和1×10 ¹⁵ cm ^-2。随后将植入的样品在O ₂气氛中于600°C退火。结果表明，一-平面氧化锌表现出通过卢瑟福窜模式（RBS-C）背散射谱证实锌亚晶格紊乱的最低水平; 相反，m平面ZnO显示出最高的无序度。在Zn的亚晶格无序在地下以及在植入的层逐渐长大Ç -平面和米-平面氧化锌，而一-平面显示刚好在植入层病症的轻微增加。使用RBS-C提供的角扫描显示在窜在地下层效果的保存一个-平面氧化锌。相反，在m平面ZnO中可以看到较窄且较浅的角度扫描倾角。拉曼光谱显示出显著O形亚晶格紊乱和O重排主要是在一-平面和米-平面氧化锌相比Ç平面。离子注入后，在375 nm处与激子相关的发光带几乎完全消失，与缺陷相关的带“转移”到较短的波长。退火对近带边缘（NBE）发光恢复具有有益的影响，而深层发射（DLE）发光已转移到比植入后出现的波长更低的波长。