Wideband third‐order single‐transistor all‐pass filter,International Journal of Circuit Theory and Applications

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Wideband third‐order single‐transistor all‐pass filter
International Journal of Circuit Theory and Applications ( IF 1.8 ) Pub Date : 2020-04-01 , DOI: 10.1002/cta.2786
Mohamed B. Elamien ₁ , Brent J. Maundy ₁ , Leonid Belostotski ₁ , Ahmed S. Elwakil _{1,

2,

3}

Affiliation

In this letter, a third‐order wideband voltage‐mode all‐pass filter (APF) is proposed for application as a true time delay (TTD) cell. The advantages of designing a single‐stage higher order filter over cascading several lower order stages are illustrated. The proposed APF circuit is based on a single metal‐oxide‐semiconductor (MOS) transistor and is canonical because it requires one resistor, one inductor, and two capacitors. To the best of the authors' knowledge, this is the first single‐transistor third‐order APF circuit to be reported in the literature. The operation of the proposed APF is validated through post‐layout simulations in a 65‐nm CMOS technology. The simulation results demonstrate a group delay of 59.4 ps across a 13.2‐GHz bandwidth with a maximum delay‐bandwidth product of 0.783, while consuming only 3.54mW from a 1‐V supply voltage. Moreover, the designed circuit achieves an input‐referred IP3 of 19.95 dBm and occupies an area of 161.5μm × 204.8μm.

中文翻译：

宽带三阶单晶体管全通滤波器

在这封信中，建议将三阶宽带电压模式全通滤波器（APF）用作真实时间延迟（TTD）单元。阐述了设计单级高阶滤波器优于级联几个低阶级的优势。拟议的APF电路基于单个金属氧化物半导体（MOS）晶体管，并且是规范的，因为它需要一个电阻器，一个电感器和两个电容器。据作者所知，这是文献中第一个报告的单晶体管三阶APF电路。拟议的APF的运行通过65 nm CMOS技术中的布局后仿真得到验证。仿真结果表明，在13.2 GHz带宽上的群时延为59.4 ps，最大时延带宽积为0.783，而仅消耗3。1V电源电压为54mW。此外，设计的电路可实现19.95 dBm的输入参考IP3并占用161.5面积μ米×204.8 μ米。

更新日期：2020-04-01

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