The paper presents a class‐AB flipped voltage follower (FVF) cell based on quasi‐floating gate and bulk‐driven techniques. The quasi‐floating gate technique is used to increase the current sinking capability, whereas the bulk‐driven technique is used to enhance the current sourcing capability by reducing the threshold voltage. Using these two techniques, the proposed class‐ AB FVF cell offers high current sinking and sourcing capabilities. Also, it provides high symmetrical slew rate without any additional circuitry. The physical layout of the proposed class‐ AB FVF cell has been designed in Cadence Virtuoso Layout XL editor using BSIM3v3 180‐nm CMOS technology, and post‐layout simulation results have been presented to validate its performance. The corner analysis of the proposed class‐ AB FVF cell has also been performed with temperature and supply voltage as design variables to show its performance under extreme conditions.

中文翻译：

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具有高对称压摆率和高电流汲取/吸收能力的AB类翻转电压跟随器电池

本文介绍了一种基于准浮栅和体驱动技术的AB类翻转电压跟随器（FVF）电池。准浮栅技术用于增加电流吸收能力，而体驱动技术用于通过降低阈值电压来增强电流源能力。利用这两种技术，建议的AB类FVF电池可提供高电流吸收和拉电流功能。而且，它无需任何附加电路即可提供高对称压摆率。建议的AB类FVF电池的物理布局是使用BSIM3v3 180 nm CMOS技术在Cadence Virtuoso Layout XL编辑器中设计的，并且已提出布局后仿真结果以验证其性能。