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Oxygen Vacancy Controlled SiZnSnO Thin‐Film Inverters with High Gain
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-04-14 , DOI: 10.1002/pssa.201900978 Jae Min Byun 1 , Sang Yeol Lee 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-04-14 , DOI: 10.1002/pssa.201900978 Jae Min Byun 1 , Sang Yeol Lee 1
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Amorphous SiZnSnO (a‐SZTO) thin films are successfully deposited to control the electrical characteristics by changing the oxygen partial pressure [p (O2)] ratio during the deposition. As the p (O2) ratio increases, the on current, off current, and the field effect mobility (μ FE) decrease and the threshold voltage (V th) shift to the positive direction gradually. This phenomenon occurs because the oxygen vacancies (V O) in the channel are suppressed due to the effect of oxygen injected during the deposition. To explore the possibility that the device can be applied to integrated thin‐film circuit and operate well in the application, the n‐type only inverters are fabricated using V O controlled thin‐film transistors (TFTs). All inverters have clear voltage transfer characteristics (VTCs) and well operate in the range of 3–15 V of V DD. When V th shifts to positive direction in enhancement mode (E‐mode), the voltage transition region (V tr) of the inverter also shifts to positive direction. The highest voltage gain is measured to be about 26.554 V/V at 15 V of V DD. It is proposed to be able to fabricate the inverters and control the transition value of VTCs of the inverter simply by changing p (O2) ratio of E‐mode TFT.
中文翻译：
氧空缺控制的高增益SiZnSnO薄膜逆变器
通过沉积过程中改变氧分压[ p（O 2）]比，成功沉积了非晶SiZnSnO（a-SZTO）薄膜，以控制电特性。作为p（O 2）的比例增加时，导通电流，截止电流，并且场效应迁移率（μ FE）和下降阈值电压（V个）移逐步正方向。出现此现象是因为氧空位（V O由于沉积过程中注入的氧气的作用，通道中的）受到抑制。为了探索将该器件应用于集成薄膜电路并在该应用中良好运行的可能性，仅使用V O控制的薄膜晶体管（TFT）制作了仅n型逆变器。所有逆变器均具有清晰的电压传输特性（VTC），并且可以在V DD的3–15 V范围内正常工作。当V th在增强模式（E模式）下向正方向移动时，逆变器的电压过渡区域（V tr）也会向正方向移动。在V DD的15 V下测得的最高电压增益约为26.554 V / V。提出能够仅通过改变E模式TFT的p（O 2）比来制造逆变器并控制逆变器VTC的过渡值。
更新日期：2020-06-18
中文翻译：
氧空缺控制的高增益SiZnSnO薄膜逆变器
通过沉积过程中改变氧分压[ p（O 2）]比，成功沉积了非晶SiZnSnO（a-SZTO）薄膜，以控制电特性。作为p（O 2）的比例增加时，导通电流，截止电流，并且场效应迁移率（μ FE）和下降阈值电压（V个）移逐步正方向。出现此现象是因为氧空位（V O由于沉积过程中注入的氧气的作用，通道中的）受到抑制。为了探索将该器件应用于集成薄膜电路并在该应用中良好运行的可能性，仅使用V O控制的薄膜晶体管（TFT）制作了仅n型逆变器。所有逆变器均具有清晰的电压传输特性（VTC），并且可以在V DD的3–15 V范围内正常工作。当V th在增强模式（E模式）下向正方向移动时，逆变器的电压过渡区域（V tr）也会向正方向移动。在V DD的15 V下测得的最高电压增益约为26.554 V / V。提出能够仅通过改变E模式TFT的p（O 2）比来制造逆变器并控制逆变器VTC的过渡值。
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