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Ion Gel‐Gated Nonvolatile Formation of Lateral MoTe2 Diode for Self‐Powered Near‐Infrared Photodetection
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-03-25 , DOI: 10.1002/pssa.202000032 Qingfu Zhang 1 , Fuwei Zhuge 1 , Fengjun Xie 1 , Jun Yu 1 , Shiwen Yu 1 , Tianyou Zhai 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-03-25 , DOI: 10.1002/pssa.202000032 Qingfu Zhang 1 , Fuwei Zhuge 1 , Fengjun Xie 1 , Jun Yu 1 , Shiwen Yu 1 , Tianyou Zhai 1
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Electrostatic gates by ion liquid (IL) or ion gel (IG) have allowed the exploration of intriguing material properties that are related to heavy charge doping in low‐dimensional materials. However, the obtained gate modulation is usually volatile at room temperature due to the recovery of ion position when removing the gate bias, which hinders their application in practical functional devices. Herein, the electrochemical IG gate is explored, and a nonvolatile modulation of the doping polarity of MoTe2 (from n to p and reversibly to n) by exploiting the electrochemical hydrolysis of residual water in IG and the subsequent chemical ion adsorption on MoTe2 is demonstrated. Further, based on the asymmetrically coupled gate bias to source and drain terminals, a lateral pn diode is prepared with long‐term stability >5 × 104 s and a self‐powered responsivity >85 mA W−1 at the near‐infrared wavelength of 1050 nm. The performance of diode is further optimized by applying a slight gate bias that tunes the width, position of space charge region in junction, and the overall charge collection efficiency. The nonvolatile electrochemical IG gate thus offers a viable pathway toward 2D low‐power photodetectors in the infrared spectra range.
中文翻译：
MoTe2二极管的离子凝胶门控非易失性形成，用于自供电的近红外光电检测
离子液体（IL）或离子凝胶（IG）产生的静电门允许探索与低尺寸材料中的重电荷掺杂有关的有趣的材料特性。然而，由于去除栅极偏置时离子位置的恢复，所获得的栅极调制通常在室温下是挥发性的，这阻碍了它们在实际功能器件中的应用。这里，电化学IG栅极探索，和微尘的掺杂极性的非挥发性调制2通过利用残余水在IG电化学水解和随后的化学离子吸附于微尘（从n至p和可逆至n）2被证明。此外，基于栅极偏置与源极和漏极之间的不对称耦合，可以制备横向pn二极管，该二极管的长期稳定性> 5×10 4 s，在近红外波长下的自供电响应度> 85 mA W -1 1050 nm 通过施加轻微的栅极偏压进一步优化二极管的性能，该偏压可调节宽度，结中空间电荷区域的位置以及总体电荷收集效率。因此，非易失性电化学IG门为红外光谱范围内的2D低功率光电探测器提供了一条可行的途径。
更新日期：2020-03-25
中文翻译：
MoTe2二极管的离子凝胶门控非易失性形成，用于自供电的近红外光电检测
离子液体（IL）或离子凝胶（IG）产生的静电门允许探索与低尺寸材料中的重电荷掺杂有关的有趣的材料特性。然而，由于去除栅极偏置时离子位置的恢复，所获得的栅极调制通常在室温下是挥发性的，这阻碍了它们在实际功能器件中的应用。这里，电化学IG栅极探索，和微尘的掺杂极性的非挥发性调制2通过利用残余水在IG电化学水解和随后的化学离子吸附于微尘（从n至p和可逆至n）2被证明。此外，基于栅极偏置与源极和漏极之间的不对称耦合，可以制备横向pn二极管，该二极管的长期稳定性> 5×10 4 s，在近红外波长下的自供电响应度> 85 mA W -1 1050 nm 通过施加轻微的栅极偏压进一步优化二极管的性能，该偏压可调节宽度，结中空间电荷区域的位置以及总体电荷收集效率。因此，非易失性电化学IG门为红外光谱范围内的2D低功率光电探测器提供了一条可行的途径。
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