Persistent Floating‐Body Effects in Fully Depleted Silicon‐on‐Insulator Transistors,Physica Status Solidi (A) - Applications and Materials Science

当前位置： X-MOL 学术 › Phys. Status Solidi A › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Persistent Floating‐Body Effects in Fully Depleted Silicon‐on‐Insulator Transistors
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-03-20 , DOI: 10.1002/pssa.201900948
Hyungjin Park ₁ , Jean-Pierre Colinge ₂ , Sorin Cristoloveanu ₁ , Maryline Bawedin ₁

Affiliation

The floating‐body effects (FBEs) are widely documented in the history of silicon on‐insulator (SOI) transistors. The interest herein is threefold: 1) FBEs are revisited in the context of advanced fully depleted SOI with a thickness below 25 nm; 2) direct measurements of floating‐body potential enable in‐depth interpretation; and 3) additional evidence for the role of supercoupling is given. The typical consequences of FBEs (kink effect, parasitic bipolar transistor, transient and hysteresis in drain current, and metastable dip) are investigated and discussed. The critical roles of back‐gate biasing, body thickness, and frequency in the activation of FBEs are outlined. The signature of FBEs is still present in 12–25 nm films but disappears in sub‐10 nm‐thick transistors, due to the supercoupling effect.

中文翻译：

完全耗尽的绝缘体上硅晶体管中的永久浮体效应

浮体效应（FBE）在绝缘体上硅（SOI）晶体管的历史上已有广泛记载。本文的兴趣包括三个方面：1）在厚度低于25 nm的先进的完全耗尽SOI中重新审视FBE；2）直接测量浮体势能进行深入解释；3）给出了超级耦合作用的其他证据。对FBE的典型后果（扭结效应，寄生双极晶体管，漏极电流的瞬态和滞后以及亚稳态骤降）进行了研究和讨论。概述了背栅偏置，车身厚度和频率在FBE激活中的关键作用。FBE的特征仍然存在于12-25 nm的薄膜中，但由于超耦合效应，在亚10 nm以下的晶体管中消失了。

更新日期：2020-03-20

点击分享查看原文

点击收藏

阅读更多本刊最新论文