Development of High‐Efficiency n‐Type Front and Back Contact Passivated Emitter and Rear Locally Diffused Solar Cells Using Atmospheric Pressure Chemical Vapor Deposition of Phosphosilicate Glass and Laser Processing,Physica Status Solidi (A) - Applications and Materials Science

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Development of High‐Efficiency n‐Type Front and Back Contact Passivated Emitter and Rear Locally Diffused Solar Cells Using Atmospheric Pressure Chemical Vapor Deposition of Phosphosilicate Glass and Laser Processing
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-04-28 , DOI: 10.1002/pssa.202000117
Xia Yan ₁ , Ning Chen _{1,

2} , Firdaus Bin Suhaimi ₁ , Xinyu Zhang ₃ , Qi Wang ₃ , Hao Jin ₃ , Vinodh Shanmugam ₁ , Shubham Duttagupta ₁

Affiliation

Industrial bifacial n ‐type front and back contact (n FAB) silicon solar cells, consisting of a boron‐doped p ⁺ emitter and a phosphorus‐doped n ⁺ back surface field (BSF), are known to give good bifaciality, high and stabilized efficiency. One possible approach to further enhance the cell efficiency is to convert conventional passivated emitter and rear totally diffused (PERT) into rear locally diffused (PERL) structure. Herein, bifacial n FAB PERT and PERL cells are fabricated by combining atmospheric pressure chemical vapor deposition (APCVD) of phosphosilicate glass (PSG) as doping source and laser processing. For PERL cells, two approaches are studied to locally form phosphorus‐doped BSF: 1) laser doping, and 2) laser ablation of a diffusion barrier layer. For ablation approach, an alkaline treatment is introduced immediately after laser process, which leads to the formation of locally textured BSF. Due to this locally textured contact, the resultant fill factor (FF ) and series resistance (R _s) loss of the PERL cells are even less than that of the reference PERT cells. As a result, the champion cell of PERL shows a good efficiency of 21.3% with open‐circuit voltage (V _oc) of 662 mV, short‐circuit current density (J _sc) of 39.6 mA cm⁻², and a high FF of 81.1%.

中文翻译：

利用大气压化学气相沉积磷硅酸盐玻璃和激光加工技术开发高效n型正面和背面接触钝化发射极和背面局部扩散太阳能电池

由硼掺杂的p ⁺发射极和磷掺杂的n ⁺背表面场（BSF）组成的工业双面n型正面和背面接触（n FAB）硅太阳能电池具有良好的双面性，高稳定性效率。进一步提高电池效率的一种可能方法是将常规的钝化发射极和后部全扩散（PERT）转换为后部局部扩散（PERL）结构。在此，双面nFAB PERT和PERL电池是通过结合磷硅玻璃（PSG）作为掺杂源的常压化学气相沉积（APCVD）和激光处理而制造的。对于PERL电池，研究了两种方法来局部形成掺磷的BSF：1）激光掺杂和2）激光烧蚀扩散阻挡层。对于消融方法，在激光处理之后立即引入碱处理，这导致形成局部纹理化的BSF。由于这种局部纹理接触，PERL单元的合成填充因子（FF）和串联电阻（R _s）损耗甚至比参考PERT单元的损耗小。结果，PERL的冠军电池在开路电压（V _oc）下显示出21.3％的良好效率。）为662 mV，短路电流密度（J _sc）为39.6 mA cm ^-2，高FF为81.1％。

更新日期：2020-04-28

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