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Enhanced Thermoelectric Properties in p‐Type Double Half‐Heusler Ti2−yHfyFeNiSb2−xSnx Compounds
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-04-28 , DOI: 10.1002/pssa.202000096
Qingmei Wang 1 , Xiaofang Li 1 , Chen Chen 1 , Wenhua Xue 2 , Xiaodong Xie 1 , Feng Cao 3 , Jiehe Sui 4 , Yumei Wang 2 , Xingjun Liu 1, 4 , Qian Zhang 1
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Double half‐Heusler Ti2FeNiSb2‐based compounds, which can be regarded as a combination of 17‐electron TiFeSb and 19‐electron TiNiSb, have a lower intrinsic thermal conductivity due to the smaller group velocity phonons and the disordered scattering by Fe/Ni. An enhanced room‐temperature Hall carrier concentration of ≈4.8 × 1021 cm−3 is achieved by doping Sn on the Sb site in a series of Ti2FeNiSb2−x Snx (x  = 0.2, 0.3, 0.4, and 0.5) samples. Combined with the further decreased lattice thermal conductivity by alloying with Hf2FeNiSb2, a low lattice thermal conductivity of ≈1.95 W m−1 K−1 and a peak thermoelectric figure of merit (ZT) of ≈0.52 at 923 K are obtained in Ti1.6Hf0.4FeNiSb1.7Sn0.3, indicating the promising applications of double half‐Heusler compounds.

中文翻译:

p型双半霍斯勒Ti2-yHfyFeNiSb2-xSnx化合物的增强的热电性能

双半Heusler Ti 2 FeNiSb 2基化合物(可以看作是17电子TiFeSb和19电子TiNiSb的组合)由于较低的群速度声子和Fe //引起的无序散射而具有较低的固有热导率。你。通过在一系列Ti 2 FeNiSb 2− x Sn xx  = 0.2、0.3、0.4和0.5)的Sb部位掺杂Sn可获得约4.8×10 21  cm -3的室温霍尔载流子浓度样品。与Hf 2 FeNiSb 2合金化,进一步降低晶格导热率,一个低点阵≈1.95脉冲W M的热传导率-1  ķ -1和峰值热电优值(ZT)的≈0.52在923K下图中的Ti,获得1.6的Hf 0.4 FeNiSb 1.7的Sn 0.3,表示的双有为应用半霍斯勒化合物。
更新日期:2020-04-28
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