Enhanced Thermoelectric Properties in p‐Type Double Half‐Heusler Ti2−yHfyFeNiSb2−xSnx Compounds,Physica Status Solidi (A) - Applications and Materials Science

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Enhanced Thermoelectric Properties in p‐Type Double Half‐Heusler Ti2−yHfyFeNiSb2−xSnx Compounds
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-04-28 , DOI: 10.1002/pssa.202000096
Qingmei Wang ₁ , Xiaofang Li ₁ , Chen Chen ₁ , Wenhua Xue ₂ , Xiaodong Xie ₁ , Feng Cao ₃ , Jiehe Sui ₄ , Yumei Wang ₂ , Xingjun Liu _{1,

4} , Qian Zhang ₁

Affiliation

Double half‐Heusler Ti₂FeNiSb₂‐based compounds, which can be regarded as a combination of 17‐electron TiFeSb and 19‐electron TiNiSb, have a lower intrinsic thermal conductivity due to the smaller group velocity phonons and the disordered scattering by Fe/Ni. An enhanced room‐temperature Hall carrier concentration of ≈4.8 × 10²¹ cm⁻³ is achieved by doping Sn on the Sb site in a series of Ti₂FeNiSb_2−xSn_x (x = 0.2, 0.3, 0.4, and 0.5) samples. Combined with the further decreased lattice thermal conductivity by alloying with Hf₂FeNiSb₂, a low lattice thermal conductivity of ≈1.95 W m⁻¹ K⁻¹ and a peak thermoelectric figure of merit (ZT) of ≈0.52 at 923 K are obtained in Ti_1.6Hf_0.4FeNiSb_1.7Sn_0.3, indicating the promising applications of double half‐Heusler compounds.

中文翻译：

p型双半霍斯勒Ti2-yHfyFeNiSb2-xSnx化合物的增强的热电性能

双半Heusler Ti ₂ FeNiSb ₂基化合物（可以看作是17电子TiFeSb和19电子TiNiSb的组合）由于较低的群速度声子和Fe //引起的无序散射而具有较低的固有热导率。你。通过在一系列Ti ₂ FeNiSb ₂₋_x Sn _x（x = 0.2、0.3、0.4和0.5）的Sb部位掺杂Sn可获得约4.8×10 ²¹ cm ^-3的室温霍尔载流子浓度样品。与Hf ₂ FeNiSb ₂合金化，进一步降低晶格导热率，一个低点阵≈1.95脉冲W M的热传导率^-1 ķ ^-1和峰值热电优值（ZT）的≈0.52在923K下图中的Ti，获得_1.6的Hf _0.4 FeNiSb _1.7的Sn _0.3，表示的双有为应用半霍斯勒化合物。

更新日期：2020-04-28

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