Inorganic Functionalization of CdSexS1–x/ZnS Core–Shell Quantum Dots and Their Photoelectric Properties,Physica Status Solidi (A) - Applications and Materials Science

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Inorganic Functionalization of CdSexS1–x/ZnS Core–Shell Quantum Dots and Their Photoelectric Properties
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-04-22 , DOI: 10.1002/pssa.202000010
Wenkang Zhang ₁ , Qinyue Zhong ₁ , Xinmei Liu ₁ , Qing Lu ₁

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In this article, different CdSe_xS_1–x quantum dots (QDs) with stearic acid as ligands are synthesized, and then the outer ZnS shell is coated with oleylamine (OLA) as ligands using a single molecular source method. The surface ligand exchange of CdSe_0.6S_0.4 and CdSe_0.6S_0.4/ZnS QDs is conducted with ammonium zinc chloride ((NH₄)₂ZnCl₄) inorganic ligands. The QDs layers are deposited on indium tin oxide (ITO) substrate using a spin coating method before and after ligand exchanges. The morphology, crystal form, and group of QDs are examined using a high‐resolution transmission electron microscope (HRTEM), X‐ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR). Under the condition of simulated sunlight irradiation, the photoelectrochemical properties are tested with an electrochemical workstation. The results show that the distance between QDs decreases after ligand exchange. The photocurrent density of CdSe_0.6S_0.4/ZnS QDs films after ligand exchange reaches 7.23 mA cm⁻², which is 11 times that of the photocurrent density before ligand exchange. The reason may be that ZnCl₄²⁻ has strong ligand electron donor capacity, which increases the probability of nonradiative transition.

中文翻译：

CdSexS1-x / ZnS核-壳量子点的无机功能化及其光电性能

在本文中，合成了以硬脂酸为配体的不同CdSe _x S _{1– x}量子点（QD），然后使用单分子源方法在ZnS外壳的表面涂上油胺（OLA）作为配体。CdSe _0.6 S _0.4和CdSe _0.6 S _0.4 / ZnS QDs的表面配体交换是使用氯化铵锌（（NH ₄）₂ ZnCl ₄）无机配体。在配体交换之前和之后，使用旋涂方法将QDs层沉积在铟锡氧化物（ITO）基板上。使用高分辨率透射电子显微镜（HRTEM），X射线衍射（XRD）和傅里叶变换红外光谱（FTIR）检查了QD的形态，晶体形式和组。在模拟阳光照射的条件下，用电化学工作站测试光电化学性能。结果表明，配体交换后，量子点之间的距离减小。配体交换后CdSe _0.6 S _0.4 / ZnS QDs薄膜的光电流密度达到7.23 mA cm ^-2，这是配体交换前光电流密度的11倍。原因可能是ZnCl ₄^2-具有较强的配体电子供体容量，从而增加了非辐射跃迁的可能性。

更新日期：2020-04-22

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