This paper investigates the crystallization behavior of a Ge₂Sb₂Se₄Te₁ (GSST) chalcogenide phase change material film using Raman spectroscopy. The properties of as‐deposited, thermally treated, and laser‐written GSST films are investigated. A single mask exposure laser excitation process was developed using a spatial light modulator with an 800 nm femto‐second laser to generate a direct laser‐written EXTREME pattern. The correlation between the laser‐imprinted EXTREME pattern and the phase change transition from amorphous to crystalline state of the GSST film was characterized using Raman spectroscopy.

中文翻译：

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拉曼光谱研究激光辐照EXTREME图案的结晶行为

本文利用拉曼光谱研究了Ge ₂ Sb ₂ Se ₄ Te ₁（GSST）硫属化物相变材料膜的结晶行为。研究了沉积，热处理和激光写入的GSST薄膜的特性。使用具有800 nm飞秒激光的空间光调制器开发了单掩模曝光激光激发工艺，以产生直接的激光写入EXTREME模式。使用拉曼光谱法表征了激光压印的EXTREME图案与GSST膜从非晶态到结晶态的相变转变之间的相关性。