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Structural Perfection and Composition of Gallium-Doped Thermomigration Silicon Layers
Technical Physics Letters ( IF 0.8 ) Pub Date : 2020-04-28 , DOI: 10.1134/s1063785020030268 A. A. Lomov , B. M. Seredin , S. Yu. Martyushov , A. N. Zaichenko , S. G. Simakin , I. L. Shul’pina
中文翻译:
镓掺杂热迁移硅层的结构完善和组成
更新日期:2020-04-28
Technical Physics Letters ( IF 0.8 ) Pub Date : 2020-04-28 , DOI: 10.1134/s1063785020030268 A. A. Lomov , B. M. Seredin , S. Yu. Martyushov , A. N. Zaichenko , S. G. Simakin , I. L. Shul’pina
Abstract
A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The dependences of the perfection of structure and the composition of the layers on the temperature of their formation were studied by the methods of X-ray topography, X-ray reflection curves, and secondary-ion mass spectrometry. It is established that the formed layers are single-crystal layers and do not contain misfit dislocations at the interface with the silicon substrate. It is shown that the concentration of gallium in the layers can be varied in the range of (1.6–4.8) × 1019 cm–3, which is higher than the concentration achieved in the case in which silicon is doped with aluminum.中文翻译:
镓掺杂热迁移硅层的结构完善和组成