Abstract

A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The dependences of the perfection of structure and the composition of the layers on the temperature of their formation were studied by the methods of X-ray topography, X-ray reflection curves, and secondary-ion mass spectrometry. It is established that the formed layers are single-crystal layers and do not contain misfit dislocations at the interface with the silicon substrate. It is shown that the concentration of gallium in the layers can be varied in the range of (1.6–4.8) × 10¹⁹ cm^–3, which is higher than the concentration achieved in the case in which silicon is doped with aluminum.

中文翻译：

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镓掺杂热迁移硅层的结构完善和组成

摘要

提出了一种技术，该技术可以形成用于预期功率电子器件的重掺杂有镓的厚热迁移硅层。通过X射线形貌，X射线反射曲线和二次离子质谱法研究了层的结构和组成的完善性对它们形成温度的依赖性。已经确定形成的层是单晶层，并且在与硅衬底的界面处不包含失配位错。结果表明，各层中的镓浓度可以在（1.6–4.8）×10 ¹⁹ cm ^–3的范围内变化，这高于在硅中掺杂铝的情况下所达到的浓度。