Abstract

The ranges of H and D ions in crystalline Si and W have been calculated. It is shown that the depth distribution of the ranges is divided into two components with an increase in the ion energy: one is related to the atomic scattering in surface layers, while the other characterizes particles captured into the channel. A new phenomenon has been observed: a stable spatial structure of the beam component captured into the channel is formed when particles propagate for a short distance. At ion deceleration, the particles pass to neighboring channels and the spatial structure of the beam of particles captured into the channel breaks near the stop point. A schematic of the experiment is proposed, which makes it possible to relate the obtained spatial distribution and the angular distributions of the escaped particles.

中文翻译：

---

晶体硅和钨中通道离子的空间分布和氢同位素范围

摘要

计算了晶体硅和钨中H和D离子的范围。结果表明，随着离子能的增加，范围的深度分布被分为两个部分：一个与表面层中的原子散射有关，而另一个与捕获到通道中的粒子有关。已经观察到一种新现象：当粒子传播短距离时，捕获到通道中的光束分量会形成稳定的空间结构。在离子减速时，粒子进入相邻的通道，捕获到通道中的粒子束的空间结构在停止点附近破裂。提出了实验示意图，这使得将获得的空间分布与逸出粒子的角度分布联系起来成为可能。