Abstract

The current transport mechanisms in Au|Pt|n-GaN Schottky barrier diodes are investigated in a temperature range of 40–325 K. The calculated barrier height and ideality factor are 1.12 and 2.13 eV, respectively, and it is observed that the barrier height Φ_b increases and the ideality factor n decreases with temperature increase. The apparent barrier height and the ideality factor derived by using thermionic emission theory are found to be strongly temperature-dependent. The increase in barrier height with increasing temperature has been explained as an effect of barrier inhomogeneity. This behavior has been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneity at the interface between the metal and semiconductor. The abnormal behavior of all these parameters can be attributed to the presence of deep levels thermally activated. Conductance deep-level transient spectroscopy (CDLTS) results shows that the two deep-level defects are observed in as-grown sample with activation energies of E₁ = 0.18 eV and HL₁ = 0.87 eV.

中文翻译：

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Au | Pt | n-GaN肖特基势垒二极管中的电导深层瞬态光谱学和电流传输机理

摘要

在40–325 K的温度范围内研究了Au | Pt | n-GaN肖特基势垒二极管中的电流传输机理。计算出的势垒高度和理想因子分别为1.12和2.13 eV，观察到势垒高度Φ _b增加，并且理想因子ñ随着温度升高而降低。发现通过使用热电子发射理论得出的表观势垒高度和理想因子与温度密切相关。势垒高度随温度升高而增加已被解释为势垒不均匀性的影响。基于金属和半导体之间的界面处的势垒高度不均匀性而导致的势垒高度的高斯分布的假设，可以解释这种行为。所有这些参数的异常行为都可以归因于热激活的深水位的存在。电导深层瞬态光谱法（CDLTS）结果表明，在生长的样品中，活化能为E ₁ = 0.18 eV和HL时观察到两个深层缺陷。₁ = 0.87 eV。