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Effect of the Structural Properties on the Electrical Resistivity of the Al/Ag Thin Films during the Solid-State Reaction
Physics of the Solid State ( IF 0.9 ) Pub Date : 2020-04-28 , DOI: 10.1134/s1063783420040034 R. R. Altunin , E. T. Moiseenko , S. M. Zharkov
中文翻译:
固相反应过程中结构性质对Al / Ag薄膜电阻率的影响
更新日期:2020-04-28
Physics of the Solid State ( IF 0.9 ) Pub Date : 2020-04-28 , DOI: 10.1134/s1063783420040034 R. R. Altunin , E. T. Moiseenko , S. M. Zharkov
Abstract
Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.中文翻译:
固相反应过程中结构性质对Al / Ag薄膜电阻率的影响