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Effect of the Structural Properties on the Electrical Resistivity of the Al/Ag Thin Films during the Solid-State Reaction
Physics of the Solid State ( IF 0.9 ) Pub Date : 2020-04-28 , DOI: 10.1134/s1063783420040034
R. R. Altunin , E. T. Moiseenko , S. M. Zharkov

Abstract

Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.


中文翻译:

固相反应过程中结构性质对Al / Ag薄膜电阻率的影响

摘要

基于固相反​​应的原位电子衍射研究结果和原子比为Al:Ag = 1:3的Al / Ag薄膜的电阻率测量结果,确定了反应开始的温度并已经提出了结构相变的模型。固态反应始于70°C,在铝和银纳米层之间的界面处形成Al-Ag固溶体。已经发现的是,在反应的过程中,金属间化合物γ-的Ag 2的Al→μ -银3的Al依次形成。结果表明,形成μ‑Ag 3的可能性在所述Al / Ag薄膜的固态反应过程中Al相依赖于铝-银比率,而μ-Ag的形成3 Al相开始所有FCC铝已经反应之后。
更新日期:2020-04-28
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