In this paper, two types of RF MEMS switches namely step structure and Normal beam structure are designed and analyzed using different meander techniques. Three techniques namely plus, zigzag and three-square meander were used to lower the pull-in voltage. The actuating beam is designed with the rectangular perforations affects the performance of a switch by lowering the pull-in voltage, switching speed and results in better isolation. In this paper a comparative analysis is done for all three meander techniques with and without perforations on the beam. Total six structures have been designed with the combination three meanders and two different beam structures. The proposed stepdown structure exhibits high performance characteristics with a very low pull-in voltage of 1.2 V having an airgap of 0.8 µm between the actuation electrodes. The gold is used as beam material and HfO₂ as the dielectric material such that the upstate and downstate capacitance is seen as 1.02 fF and 49 fF. The FEM analysis is done to calculate the spring constant and thereby the pull-in voltage and behavior of the switch is studied with various parameters. The switch with a step structure and three-square meander configuration has shown best performance of all by requiring a pull-in voltage of 1.2 V and lower switching time of 0.2 µs. The proposed switch also exhibits good RF performance characteristics with an insertion loss below − 0.07 dB and return loss below − 60 dB over the frequency range of 1–40 GHz. At 28 GHz a high isolation of − 68 dB is exhibited.

在本文中，使用不同的曲折技术设计和分析了两种类型的RF MEMS开关，即阶梯结构和法线束结构。使用正，锯齿和三平方曲折这三种技术来降低吸合电压。激励梁设计有矩形孔，可通过降低吸合电压，降低开关速度并改善隔离效果来影响开关的性能。在本文中，对三种弯曲技术进行了比较分析，这些技术在光束上有无穿孔。总共设计了六个结构，结合了三个曲折和两个不同的梁结构。所提出的降压结构表现出高性能的特性，在驱动电极之间的气隙为0.8 µm，具有非常低的1.2 V吸合电压。_在图2中将其作为电介质材料，使得向上和向下电容分别为1.02 fF和49 fF。进行了有限元分析以计算弹簧常数，从而利用各种参数研究了开关的吸合电压和行为。具有阶跃结构和三平方曲折配置的开关通过要求1.2 V的吸合电压和0.2 µs的更短开关时间，表现出了全部最佳的性能。所建议的开关还具有良好的RF性能，在1–40 GHz频率范围内的插入损耗低于− 0.07 dB，回波损耗低于− 60 dB。在28 GHz时，呈现出− 68 dB的高隔离度。