A new two-dimensional analytical model is proposed for the electrical attributes of a gate-all-around heterojunction tunnel field-effect transistor, including the potential distribution, lateral and vertical electric fields, drain current, subthreshold swing, and threshold voltage. The potential distribution in the device is obtained by using the two-dimensional (2-D) Poisson equation, including the depletion regions across the source–channel, channel, and drain–channel regions. The drain current of the proposed device is derived by combining parameters such as the band-to-band generation rate, lateral electric field, and channel thickness as well as the shortest tunneling path in Kane’s model. The threshold voltage is obtained from the second derivative of the drain current. The effects of the depletion regions are also included in the model to obtain accurate results. The results are validated against ATLAS technology computer-aided design (TCAD) simulations with the SILVACO tool, revealing excellent agreement.

中文翻译：

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一种新颖的二维分析模型，用于围绕耗尽区的全栅异质结隧道场效应晶体管的电学特性

针对环栅异质结隧道场效应晶体管的电学特性，提出了一种新的二维分析模型，包括电势分布，横向和垂直电场，漏极电流，亚阈值摆幅和阈值电压。器件中的电势分布是通过使用二维（2-D）泊松方程获得的，包括跨源-沟道，沟道和漏-沟道区域的耗尽区。拟议器件的漏极电流是通过结合参数（例如，带对带产生速率，横向电场，沟道厚度以及凯恩模型中最短的隧道路径）得出的。从漏极电流的二阶导数获得阈值电压。耗尽区的影响也包括在模型中，以获得准确的结果。该结果通过SILVACO工具针对ATLAS技术的计算机辅助设计（TCAD）仿真进行了验证，显示出极好的一致性。