The quantum Hall effect (QHE) with quantized Hall resistance of h/νe² started the research on topological quantum states and laid the foundation of topology in physics. Since then, Haldane proposed the QHE without Landau levels, showing nonzero Chern number |C| = 1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realize high Chern numbers (C > 1). Here, we report the experimental discovery of high-Chern-number QHE (C = 2) without Landau levels and C = 1 Chern insulator state displaying a nearly quantized Hall resistance plateau above the Néel temperature in MnBi₂Te₄ devices. Our observations provide a new perspective on topological matter and open new avenues for exploration of exotic topological quantum states and topological phase transitions at higher temperatures.

中文翻译：

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无朗道能级的高陈数和高温量子霍尔效应

量子化霍尔电阻为h / νe ²的量子霍尔效应（QHE）开启了拓扑量子态的研究，奠定了物理学中拓扑学的基础。此后，Haldane 提出了无朗道能级的 QHE，显示非零陈数 | C | = 1，这是在相对较低的温度下通过实验观察到的。对于新兴物理学和低功耗电子学，关键问题是如何提高工作温度并实现高陈数（C > 1）。在这里，我们报告了没有朗道能级和C的高陈数 QHE ( C = 2)的实验发现= 1 Chern 绝缘体状态在 MnBi ₂ Te ₄器件中显示出高于 Néel 温度的几乎量化的霍尔电阻平台。我们的观察为拓扑物质提供了一个新的视角，并为探索更高温度下的奇异拓扑量子态和拓扑相变开辟了新的途径。