Weyl semimetals (WSMs) are a recent addition to the family of topological materials, and the physical realization of heterojunctions between different types of WSMs is challenging. Here, we use electrical components to create topoelectrical (TE) circuits for modeling and studying the transmission across heterojunctions, consisting of a Type I WSM source to a drain in the Type II or intermediary Type III WSM phase. For transport from a Type I WSM source to a Type II WSM drain, valley-independent (dependent) energy flux transmission occurs when the tilt and transmission directions are perpendicular (parallel) to each other. Furthermore, “anti-Klein” tunneling occurs between a Type I source and Type III drain where the transmission is totally suppressed for certain valleys at normal incidence. Owing to their experimental accessibility, TE circuits offer an excellent testbed for transport phenomena in WSM-based heterostructures.

魏尔半金属（WSM）是拓扑材料家族的最新成员，不同类型WSM之间异质结的物理实现具有挑战性。在这里，我们使用电气组件创建拓扑电气（TE）电路，以建模和研究跨异质结的传输，其中包括I型WSM源到II型或中间III型WSM相中的漏极。对于从I型WSM源到II型WSM漏极的传输，当倾斜方向和传输方向相互垂直（平行）时，将发生不依赖于谷（依赖）的能量通量传输。此外，“反克莱因”隧穿发生在I类源极和III类漏极之间，其中在垂直入射时，对于某些波谷，传输被完全抑制。由于实验性的可访问性，