We report the effect of substrate temperature (25–300 °C) on the structural, optical and electrical properties of Cadmium Sulphide (CdS) thin films deposited onto glass substrate by Radio Frequency (RF) magnetron sputtering. The structural, morphological, optical and electrical properties of the films were characterized by X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), UV–VIS-NIR spectroscopy and Hall Effect measurement respectively. The XRD studies showed that the films were polycrystalline with hexagonal wurtzite structure preferentially oriented along the (0 0 2) plane parallel to the substrate surface. The XRD data analysis further revealed the crystallite size of the nanocrystalline films i.e. 22–24 nm exhibiting the fact that crystallite size increased with increasing the substrate temperature. The FE-SEM images along with energy dispersive spectroscopy (EDS) studies confirmed the homogeneous, compact and pin-hole free surface morphology. The UV–VIS-NIR studies unveiled the optical transmittance in the range of 75–90% after 540 nm of the wavelength of light. The optical band gaps were found to be decreasing from 2.34 eV to 2.26 eV with increasing the substrate temperature. The films were characterized as n-type as evidenced by the Hall Effect measurement. The carrier mobility was found to be increasing gradually from 5.53 to 12.57 cm²/V·s by increasing the substrate temperature from room temperature to 300 °C due to the improvement of crystalline quality and grain size of the films. The results showed good optical and electrical properties of the films deposited at 300 °C which are suitable to use as window layer in thin film based solar cells.

我们报告了基板温度（25–300°C）对通过射频（RF）磁控溅射沉积到玻璃基板上的硫化镉（CdS）薄膜的结构，光学和电学性质的影响。分别通过X射线衍射（XRD），场发射扫描电子显微镜（FE-SEM），UV-VIS-NIR光谱和霍尔效应测量来表征薄膜的结构，形态，光学和电学性质。X射线衍射研究表明，薄膜是具有六方纤锌矿结构的多晶，优先沿平行于基板表面的（0 0 2）平面取向。XRD数据分析进一步揭示了纳米晶体膜的微晶尺寸，即22–24 nm，这表明微晶尺寸随基材温度的升高而增加。FE-SEM图像以及能量色散光谱（EDS）研究证实了均匀，致密和无针孔的表面形态。UV-VIS-NIR研究揭示了在540 nm的光波长后，其光学透射率在75-90％的范围内。发现随着衬底温度的升高，光学带隙从2.34eV减小到2.26eV。如霍尔效应测量所证明的，这些膜被表征为n型。发现载流子迁移率从5.53 cm逐渐增加到12.57 cm 34 eV至2.26 eV，随着基板温度的升高。如霍尔效应测量所证明的，这些膜被表征为n型。发现载流子迁移率从5.53 cm逐渐增加到12.57 cm 34 eV至2.26 eV，随着基板温度的升高。如霍尔效应测量所证明的，这些膜被表征为n型。发现载流子迁移率从5.53 cm逐渐增加到12.57 cm由于提高了薄膜的晶体质量和晶粒尺寸，可通过将基板温度从室温提高到300°C达到² / V·s。结果表明，在300°C下沉积的薄膜具有良好的光学和电学性质，适合用作基于薄膜的太阳能电池的窗口层。