Here, we have developed a new series of quantum dots based on the incorporation of thulium, Tm, atoms as efficient dopant in the cubic CdTe crystal structure for laser diode application potential. Therefore, Cd_1 − xTm_xTe (0 ≤ x ≤ 0.07) quantum dots were synthesized using s,s′-phenylenebis-ethynediyl-phenylene-bisthioacetate assisted microwave approach. The measurements of X-ray diffractions implied the preservation of the cubic phase of the CdTe crystals at all Tm dopant contents. The transmission electron microscopy inspected the formation of monodisperse and self-assemble nanoparticles with mean diameter from 1.8 ± 0.2 nm to 5.7 ± 0.3 nm, depending on the amount of Tm incorporated in the CdTe nanocrystals. A modulation of the optical bandgap was observed because of the doping of CdTe with Tm atoms. Highly luminescent emission spectra with tunable colors were obtained. The emission spectra showed sharp intense emitted light with an enhancement of its intensity reached to seven folds compared with the un-doped CdTe crystals. An increasing of quantum yields from 31% to 94% was realized. A decrease of the Stokes shift was observed which implies the synthesis of Cd_{1 − x} Tm_xTe QDs free of defects for the first time. This unique performance renders the prepared Cd_{1 − x} Tm_xTe to be potential candidate for the manufacturing of laser diodes.

在此，我们基于on，Tm和原子作为立方CdTe晶体结构中有效掺杂剂的掺入，开发了一系列新的量子点，以用于激光二极管。因此，Cd _{1 − x} Tm _x使用s，s'-亚苯基双-乙炔二基-亚苯基-双硫代乙酸酯辅助微波合成了Te（0≤x≤0.07）量子点。X射线衍射的测量结果表明在所有Tm掺杂物含量下CdTe晶体的立方相均得以保留。透射电子显微镜检查平均直径为1.8±0.2 nm至5.7±0.3 nm的单分散纳米颗粒和自组装纳米颗粒的形成，具体取决于掺入CdTe纳米晶体中的Tm量。由于CdTe掺有Tm原子，因此观察到了光学带隙的调制。获得具有可调颜色的高发光发射光谱。发射光谱显示出锐利的强发射光，其强度与未掺杂的CdTe晶体相比提高了七倍。实现了量子产率从31％增加到94％。观察到斯托克斯频移的降低，这意味着镉的合成第一次没有缺陷的_{1 − x} Tm _x Te QD。这种独特的性能使制备的Cd _1-x Tm _x Te成为制造激光二极管的潜在候选者。