Abstract We show that Ge epilayers on Si substrates with trenches filled by Ge at a different temperature have very low threading dislocation density compared to blanket Ge epilayers on Si substrates. In cross-sectional transmission electron microscopy, dislocations at the trench edges are observed to extend to the film surface, which is in agreement with the results of etch pit density measurements where two rows of etch pits are observed at the trench edge. This indicates an appreciable dislocation sink, which unlocks the potential of providing high quality Ge-on-Si virtual substrates for growing lattice matched III-V photovoltaics.

中文翻译：

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在硅晶片上的锗沟槽中捕获螺纹位错

摘要 我们表明，与 Si 衬底上的毯状 Ge 外延层相比，在不同温度下由 Ge 填充沟槽的 Si 衬底上的 Ge 外延层具有非常低的穿透位错密度。在横截面透射电子显微镜中，观察到沟槽边缘的位错延伸到薄膜表面，这与在沟槽边缘观察到两行蚀刻坑的蚀刻坑密度测量结果一致。这表明存在可观的位错汇，这释放了为生长晶格匹配的 III-V 族光伏提供高质量 Ge-on-Si 虚拟衬底的潜力。