In this work, we investigated an anomalous hump in the bottom-gate amorphous-InGaZnO thin-film transistors. The hump in the subthreshold region appeared at elevated temperature and disappeared after N₂ atmosphere annealing. The anomalous hump phenomenon is attributed to the existence of both main current path composed by electron and parasitic current path induced by positive charges formed by adsorbed H₂O molecules. With the increase of the testing temperature, the hump effect becomes significant since the formation of positive charges is strengthened by heat. This hump can be weakened by negative bias temperature instability stress at high temperature due to the charge-trapping mechanism.

在这项工作中，我们研究了底栅非晶InGaZnO薄膜晶体管中的异常驼峰。亚阈值区域中的驼峰在升高的温度下出现并且在N ₂气氛退火之后消失。异常驼峰现象归因于由电子组成的主电流路径和由吸附的H ₂ O分子形成的正电荷引起的寄生电流路径的存在。随着测试温度的升高，驼峰效应变得显着，这是因为通过热增强了正电荷的形成。由于电荷俘获机制，在高温下负偏压温度不稳定性应力可以减弱这种驼峰。