Herein, the effect of pulsed Nd:YAG laser irradiation at different fluencies in air at room temperature on the performance of n-PSi/ZnO-based UV MSM photodetector was demonstrated. Thermal and photon energies were coupled to synthesize n-PSi/ZnO NCs heterojunctions. The porous silicon (PSi) films with nano-sized pore arrays were first prepared via photoelectrochemical etching (PECE) of n-type silicon wafers with 45 mA/cm² current density for a duration of 30 min. This was followed by radio frequency sputtering (RFS) of ZnO on PSi at 700 °C and irradiating with a Nd: YAG laser pulses with laser fluence of 40 mJ/cm². X-ray diffraction analysis indicates the formation of ZnO wurtzite hexagonal crystal structure of n-PSi/ZnO NCs, where the crystallite size decreases (96–29 nm) with number of pulses. Field emission electron scanning microscopy and atomic force microscopy reveal porous nanostructure, arrays of nearly spherically shape particles homogeneously distributed on the entire surface where roughness increases (84–139 nm) with number of pulses.

Photoluminescence spectroscopy reveals intrinsic band-to-band transition, donor-acceptor pair emission and quenching of the broadband intensity related to improved of crystallinity, meanwhile the band gap energy of the n-PSi/ZnO NCs is found to decrease (3.26 – 3.13 V). The Nd:YAG laser annealing demonstrate a positive effect on the properties of n-PSi/ZnO NCs photodetector, exhibiting very high sensitivity (3772.92) and very short rise and recovery times (0.30 s and 0.26 s).

在此，证明了在室温下空气中以不同的通量脉冲Nd：YAG激光辐照对基于n-PSi / ZnO的UV MSM光电探测器的性能的影响。将热能和光子能量耦合以合成n-PSi / ZnO NCs异质结。首先通过光化学刻蚀（PECE）对n型硅片进行45纳米/厘米^2的电流密度，持续30分钟，以制备具有纳米级孔阵列的多孔硅（PSi）膜。随后在700°C的PSi上进行ZnO的射频溅射（RFS），并用激光通量为40 mJ / cm ²的Nd：YAG激光脉冲辐照。。X射线衍射分析表明，形成了n-PSi / ZnO NCs的ZnO纤锌矿六方晶体结构，其中，随着脉冲数的增加，微晶尺寸减小（96–29 nm）。场发射电子扫描显微镜和原子力显微镜揭示了多孔的纳米结构，几乎球形的颗粒阵列均匀地分布在整个表面上，其中随着脉冲数的增加粗糙度增加（84–139​​ nm）。

光致发光光谱显示了固有的带间跃迁，施主-受主对发射以及与结晶度提高有关的宽带强度的猝灭，同时发现n-PSi / ZnO NCs的带隙能量降低了（3.26 – 3.13 V ）。Nd：YAG激光退火对n-PSi / ZnO NCs光电探测器的性能产生了积极影响，具有很高的灵敏度（3772.92）和非常短的上升和恢复时间（0.30 s和0.26 s）。