Abstract Single-event multiple transients (SEMTs) are measured in a combinational circuit based on standard cells under pulsed laser irradiation. A circuit simulation is performed to explain the experiment results and investigate the SEMTs mitigation strategy. Pulsed laser exposures of different rows show that the single-event double transients (SEDTs) may be merged into single-event single transients due to the pulse broadening. The pulse broadening likely results from the unbalanced high to low and low to high propagation delays, and is found to be impacted by the supply voltage and the load capacitance of the investigated circuit. In addition, making the NAND/inverter load capacitance ratio less than one and using lower supply voltages tend to mitigate SEDTs and reduce the pulse widths of SETs measured at the chain output.

中文翻译：

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减轻基于标准单元的组合电路中的单事件多瞬态

摘要 单事件多瞬态 (SEMT) 在基于标准单元的组合电路中在脉冲激光照射下进行测量。执行电路仿真以解释实验结果并研究 SEMT 缓解策略。不同行的脉冲激光曝光表明，由于脉冲展宽，单事件双瞬态（SEDT）可能合并为单事件单瞬态。脉冲展宽可能是由不平衡的高到低和低到高的传播延迟引起的，并且被发现受所研究电路的电源电压和负载电容的影响。此外，使 NAND/逆变器负载电容比小于 1 并使用较低的电源电压往往会减轻 SEDT 并减少在链输出处测量的 SET 的脉冲宽度。