We present InAs/AlSb quantum cascade lasers (QCLs) monolithically integrated on an on-axis (001) Si substrate. The lasers emit near 8 μm with threshold current densities of 0.92–0.95 kA/cm² at 300 K for 3.6-mm-long devices and operate in pulsed mode up to 410 K. QCLs of the same design grown for comparison on a native InAs substrate demonstrated a threshold current density of 0.75 kA/cm² and the same maximum operating temperature. The low threshold current density of the QCLs grown on Si makes them suitable for photonic integrated sensor implementation.

中文翻译：

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在轴（001）硅衬底上生长的基于InAs的量子级联激光器

我们提出了InAs / AlSb量子级联激光器（QCL）单片集成在轴（001）Si衬底上。激光器发射近8 μ与0.92-0.95千安/厘米的阈值电流密度米²在300K为3.6毫米长的设备和上的本机在脉冲模式下达到同样设计生长的410米K.操作的QCL用于比较InAs衬底显示出0.75 kA / cm ²的阈值电流密度和相同的最高工作温度。Si上生长的QCL的低阈值电流密度使其适合光子集成传感器的实现。