In this paper, a study of the effect of thin GaN interfacial layer (1 nm ) on the electrical behavior of Au/n‐GaAs structure is investigated in wide temperature range 100 to 400 K , using Silvaco‐Atlas simulator. As a result, from I‐V characteristics, the series resistance R _s is increased with decreasing temperature for Au/GaN/n‐GaAs structure, while it is remained almost constant for Au/n‐GaAs structure. The saturation current I _s is decreased with decreasing temperature for both structures. The ideality factor n is increased, and the barrier height is decreased when temperature decreases, with important variation for Au/GaN/n‐GaAs structure. This abnormal behavior is due to the deviation of the dominant conduction mechanisms, from the thermionic emission TE current to the thermionic field emission TFE and the field emission FE. As well as, the Au/n‐GaAs structure shows a homogeneous of barrier height, while it is inhomogeneous for Au/GaN/n‐GaAs structure. In addition, from C‐V characteristics, the potential diffusion V _d and the barrier height are increased with decreasing temperature for both structures, conversely to those obtained from the TE theory. These results confirm the deviation of the TE current to the TFE and FE currents with decreasing temperature for the Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes.

中文翻译：

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在宽温度范围内研究Au / n-GaAs和Au / GaN / n-GaAs肖特基二极管的电流电压和电容电压特性

本文使用Silvaco-Atlas模拟器在100至400 K的宽温度范围内，研究了GaN薄界面层（1 nm）对Au / n-GaAs结构电行为的影响的研究。结果，从I-V特性来看，Au / GaN / n-GaAs结构的串联电阻R _s随着温度降低而增加，而对于Au / n-GaAs结构的串联电阻R _s几乎保持恒定。对于两种结构，饱和电流I _s随着温度降低而减小。理想因子n增加，势垒高度 当温度降低时，金属的含量会降低，对于Au / GaN / n-GaAs结构会有重要变化。这种异常行为是由于从热电子发射TE电流到热电子场发射TFE和场发射FE的主导传导机制的偏离引起的。不仅如此，Au / n-GaAs结构显示出均匀的势垒高度，而对于Au / GaN / n-GaAs结构而言则不均匀。此外，根据C–V特性，势能扩散V _d和势垒高度 与从TE理论获得的结果相反，两种结构的温度都随着温度的降低而增加。这些结果证实了随着Au / n-GaAs和Au / GaN / n-GaAs肖特基二极管温度的降低，TE电流相对于TFE和FE电流的偏差。