In this paper, an AlGaN/GaN HEMT with a reversed pyramidal channel layer (RPC‐HEMT) is proposed. The main purpose of the paper is an increase in the breakdown voltage of a conventional HEMT (C‐HEMT) to be suitable in high‐power applications. In the RPC‐HEMT, a reverse pyramidal channel layer in the high electric field traps the energetic carriers that cause the transistors to break. The steps decrease the carrier concentration across the two‐dimensional electron gas (2DEG) channel layer, especially under the gate contact. Therefore, the critical electrical field reduces by the uniform division of carrier mass and improves the breakdown voltage of the RPC‐HEMT by 32%. Besides, the maximum output power density of the new transistor improves compared with the conventional one. In addition, the radio frequency (RF) characteristics such as the cutoff frequency and maximum oscillation frequency of the RPC‐HEMT improve by the decline in the gate‐source capacitance. This article provides kink effects with the output reflection coefficient (S₂₂) and the short‐circuit current gain (h₂₁) to show how this anomalous phenomenon affects high‐frequency performance of devices. Finally, the proposed method makes the RPC‐HEMT appropriate for high‐power and high‐frequency applications.

中文翻译：

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倒金字塔通道层的AlGaN / GaN HEMT：研究和基础物理学

本文提出了一种具有倒金字塔通道层（RPC-HEMT）的AlGaN / GaN HEMT。本文的主要目的是提高常规HEMT（C-HEMT）的击穿电压，以适合大功率应用。在RPC-HEMT中，高电场中的反向锥体通道层会俘获导致晶体管破裂的高能载流子。这些步骤降低了二维电子气（2DEG）通道层上的载流子浓度，尤其是在栅极接触下。因此，临界电场通过载流子质量的均匀划分而减小，并使RPC-HEMT的击穿电压提高了32％。此外，与传统晶体管相比，新晶体管的最大输出功率密度有所提高。此外，射频（RF）特性（例如RPC-HEMT的截止频率和最大振荡频率）通过栅极-源极电容的减小而改善。本文通过输出反射系数（S₂₂）和短路电流增益（h ₂₁），以显示这种异常现象如何影响设备的高频性能。最后，所提出的方法使RPC-HEMT适用于大功率和高频应用。