Precise determination of composition is requisite for Al_xGa_1‐xN‐based energy band engineering. Secondary cluster ions in a time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) full spectrum are introduced for accurate quantification of Al in Al_xGa_1‐xN for AlGaN‐based devices. It was found that statistical analysis with huge number of large secondary cluster ions (without small ions) show much better linear dependence with apparent compensation of matrix effect, particularly in negative polarity. For Al_xGa_1‐xN with x = 0 to 0.7, x values calculated based on large negative cluster ions (NCIs) show excellent linear dependence with real values. Besides, atomic count ratio of C (Al)/C (Ga) and C (Ga)/C (Al) also shows great linear relationships with corresponding mole fraction ratios in a large range. Overlap of these linear ranges offers a reliable and convenient quantification protocol of Al_xGa_1‐xN covering a full range of x = 0 to 1. This study verifies that the secondary cluster ions are beneficial for quantification of Al_xGa_1‐xN‐based materials.

中文翻译：

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ToF-SIMS对AlxGa1-xN合金中的铝进行大规模定量：次级簇离子的益处

精确确定成分是基于Al _x Ga ₁ - _x N的能带工程的必要条件。在飞行时间二次离子质谱（ToF‐SIMS）全谱图中引入了二次簇离子，用于基于AlGaN的设备中Al _x Ga ₁ - _x N中的Al的准确定量。已发现，使用大量大的第二簇离子（没有小离子）进行的统计分析显示出更好的线性依赖性，并且对矩阵效应有明显的补偿，尤其是在负极性方面。对于Al _x Ga _{1- x} N（x = 0至0.7），x基于大的负簇离子（NCI）计算的值显示出与实际值的出色线性相关性。此外，C（Al）/ C（Ga）和C（Ga）/ C（Al）的原子数比在较大范围内也具有相应的摩尔分数比的良好线性关系。这些线性范围的重叠提供了可靠且方便的Al _x Ga _{1- x} N定量方案，涵盖了x = 0到1的整个范围。这项研究验证了次级簇离子对Al _x Ga _{1- x的}定量是有益的基于N的材料。