The effect of substrate temperature on the direct current magnetron‐sputtered zirconium oxide (ZrO₂) dielectric films was investigated. Stoichiometric of the ZrO₂ thin films was obtained at an oxygen partial pressure of 4.0 × 10⁻² Pa. X‐ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal‐oxide‐semiconductor devices were fabricated on ZrO₂/Si stacks with Al gate electrode. The dielectric properties of ZrO₂ layer and interface quality at ZrO₂/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10⁻⁷ to 0.64 × 10⁻⁹ A cm⁻² with the increase of substrate temperature from 303 to 673 K.

中文翻译：

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衬底温度影响MOS器件的ZrO2膜

研究了衬底温度对直流磁控溅射氧化锆（ZrO ₂）介电膜的影响。ZrO ₂薄膜的化学计量是在氧分压为4.0×10 ^-2 Pa的条件下获得的。X射线衍射研究表明，随着衬底温度从303℃升高到303℃，层中的微晶尺寸从4.8 nm增加到16.1 nm。 673K。金属氧化物半导体器件是在带有Al栅电极的ZrO ₂ / Si叠层上制造的。的ZrO的介电性质₂层和界面质量在的ZrO ₂/ Si受衬底温度的影响很大。随着衬底温度从303 K升高到673 K ，介电常数从15增加到25，并且漏电流密度从0.12×10 ^-7减小到0.64×10 ^-9 A cm ^-2。