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The electronic band structure analysis of OLED device by means of in situ LEIPS and UPS combined with GCIB
Surface and Interface Analysis ( IF 1.6 ) Pub Date : 2020-03-23 , DOI: 10.1002/sia.6777
Masahiro Terashima 1 , Takuya Miyayama 1 , Tetsuro Shirao 1 , Hin Wai Mo 2 , Yasuhiro Hatae 2 , Hiroshi Fujimoto 2 , Katsumi Watanabe 1
Affiliation  

Low‐energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet photoelectron spectroscopy (UPS) incorporated into the multitechnique XPS system were used to probe the ionization potential and the electron affinity of organic materials, respectively. By utilizing gas cluster ion beam (GCIB), in situ analyses and depth profiling of LEIPS and UPS were also demonstrated. The band structures of the 10‐nm‐thick buckminsterfullerene (C60) thin film on Au (100 nm)/indium tin oxide (100 nm)/glass substrate were successfully evaluated in depth direction.

中文翻译:

原位LEIPS和UPS结合GCIB对OLED器件的电子带结构分析

结合到多技术XPS系统中的低能逆光电子能谱(LEIPS)和紫外光电子能谱(UPS)分别用于探测有机材料的电离势和电子亲和力。利用气体团簇离子束(GCIB),还对LEIPS和UPS进行了现场分析和深度剖析。在深度方向成功评估了10 nm厚的Buckminsterfullerene(C 60)薄膜在Au(100 nm)/氧化铟锡(100 nm)/玻璃基板上的能带结构。
更新日期:2020-03-23
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