Ultrafast and Local Optoelectronic Transport in Topological Insulators,Physica Status Solidi (B) - Basic Solid State Physics

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Ultrafast and Local Optoelectronic Transport in Topological Insulators
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-04-04 , DOI: 10.1002/pssb.202000033
Jonas Kiemle ₁ , Paul Seifert ₂ , Alexander W. Holleitner ₁ , Christoph Kastl ₁

Affiliation

Recently, topological insulators (TIs) were discovered as a new class of materials representing a subset of topological quantum matter. While a TI possesses a bulk band gap similar to an ordinary insulator, it exhibits gapless states at the surface featuring a spin‐helical Dirac dispersion. Due to this unique surface band structure, TIs may find use in (opto)spintronic applications. Herein, optoelectronic methods are discussed to characterize, control, and read‐out surface state charge and spin transport of 3D TIs. In particular, time‐ and spatially‐resolved photocurrent microscopy at near‐infrared excitation can give fundamental insights into charge carrier dynamics, local electronic properties, and the interplay between bulk and surface currents. Furthermore, possibilities of applying such ultrafast optoelectronic methods to study Berry curvature‐related transport phenomena in topological semimetals are discussed.

中文翻译：

拓扑绝缘体中的超快和局部光电传输

最近，发现了拓扑绝缘体（TIs）作为代表拓扑量子物质子集的一类新材料。TI具有类似于普通绝缘子的体隙，但在表面表现出无间隙状态，具有自旋螺旋狄拉克色散。由于这种独特的表面带结构，TI可能会用于（光电）自旋电子应用。本文讨论了光电方法，以表征，控制和读取3D TI的表面状态电荷和自旋传输。特别是，在近红外激发下时间和空间分辨的光电流显微镜可以提供有关电荷载流子动力学，局部电子性质以及体电流与表面电流之间相互作用的基本信息。此外，

更新日期：2020-04-04

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