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Raman and Photoluminescence Study of Al,N‐Codoped ZnO Films Deposited at Oxygen‐Rich Conditions by Magnetron Sputtering
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-04-03 , DOI: 10.1002/pssb.201900788 Vitalii Karpyna 1 , Arsenii Ievtushenko 1 , Oleksandr Kolomys 2 , Oksana Lytvyn 2, 3 , Viktor Strelchuk 2 , Vasily Tkach 4 , Sergii Starik 4 , Vladimir Baturin 5 , Oleksandr Karpenko 5
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-04-03 , DOI: 10.1002/pssb.201900788 Vitalii Karpyna 1 , Arsenii Ievtushenko 1 , Oleksandr Kolomys 2 , Oksana Lytvyn 2, 3 , Viktor Strelchuk 2 , Vasily Tkach 4 , Sergii Starik 4 , Vladimir Baturin 5 , Oleksandr Karpenko 5
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Optical properties of as‐grown high nitrogen‐doped ZnO:Al,N films (with a variation of nitrogen concentration from 2.3 to 4.3 atomic %) are studied by Raman, photoluminescence, and Fourier‐transform infrared spectroscopy (FTIR). The intensity of mode A1LO, peaked at 580 cm−1, increases with increasing nitrogen concentration. The silent mode B1low at 275 cm−1 is clearly observed testifying increased disorder‐activated scattering in ZnO. Photoluminescence spectra reveal near‐band edge emission as well as several defect‐related bands, the intensity of which increases with nitrogen content. The blue band (2.61 eV) can be related to the transition from shallow donor level to deep nitrogen acceptor level. Also, incorporation of nitrogen in ZnO lattice causes appearance of both Zni and Oi defects responsible for violet (3.08 eV) and yellow (2.16 eV) emission band, respectively. At the same time near‐band edge emission of ZnO:Al,N films is not suppressed by simultaneously introduced Al and N impurities. Al compensates distortions in ZnO crystal lattice caused by nitrogen doping and, thus, stabilizes near‐band edge emission.
中文翻译：
磁控溅射在富氧条件下沉积的Al，N-掺杂的ZnO薄膜的拉曼光谱和光致发光研究
通过拉曼光谱，光致发光和傅立叶变换红外光谱（FTIR）研究了已生长的高氮掺杂ZnO：Al，N薄膜的光学性质（氮浓度从2.3到4.3原子％变化）。模式A 1 LO的强度在580 cm -1处达到峰值，随氮浓度的增加而增加。静音模式B 1低至275 cm -1可以清楚地观察到，这证明了ZnO中无序激活的散射增加。光致发光光谱揭示了近带边缘发射以及几个与缺陷相关的带，其强度随氮含量而增加。蓝带（2.61 eV）可能与从浅供体能级到深氮受体能级的转变有关。同样，在ZnO晶格中掺入氮会导致分别导致紫色（3.08 eV）和黄色（2.16 eV）发射带的Zn i和O i缺陷的出现。同时，ZnO：Al，N膜的近带边缘发射不会被同时引入的Al和N杂质抑制。Al补偿了氮掺杂引起的ZnO晶格畸变，从而稳定了近带边缘发射。
更新日期：2020-04-03
中文翻译：
磁控溅射在富氧条件下沉积的Al，N-掺杂的ZnO薄膜的拉曼光谱和光致发光研究
通过拉曼光谱，光致发光和傅立叶变换红外光谱（FTIR）研究了已生长的高氮掺杂ZnO：Al，N薄膜的光学性质（氮浓度从2.3到4.3原子％变化）。模式A 1 LO的强度在580 cm -1处达到峰值，随氮浓度的增加而增加。静音模式B 1低至275 cm -1可以清楚地观察到，这证明了ZnO中无序激活的散射增加。光致发光光谱揭示了近带边缘发射以及几个与缺陷相关的带，其强度随氮含量而增加。蓝带（2.61 eV）可能与从浅供体能级到深氮受体能级的转变有关。同样，在ZnO晶格中掺入氮会导致分别导致紫色（3.08 eV）和黄色（2.16 eV）发射带的Zn i和O i缺陷的出现。同时，ZnO：Al，N膜的近带边缘发射不会被同时引入的Al和N杂质抑制。Al补偿了氮掺杂引起的ZnO晶格畸变，从而稳定了近带边缘发射。
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