Abstract

Parameters of terahertz (THz) emission in two-dimensional (2D) tungsten diselenide (WSe₂) film grown by chemical vapor deposition from the gas phase have been studied for the first time. The main mechanism of THz radiation generation in this system is established. Dependence of the THz signal amplitude on azimuthal angle in a 2D WSe₂ film has been studied. The distribution of the electric field of laser pumping in the WSe₂/SiO₂/Si structure has been calculated as dependent on the thickness of silicon dioxide layer. The choice of optimum structure geometry for effective generation of THz radiation by a WSe₂ monolayer is theoretically substantiated.

中文翻译：

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单层钨二硒化物表面的太赫兹发射

摘要

首次研究了通过气相化学气相沉积法生长的二维（2D）二硒化钨（WSe ₂）薄膜中的太赫兹（THz）发射参数。建立了该系统太赫兹辐射产生的主要机理。研究了2D WSe ₂薄膜中THz信号幅度对方位角的依赖性。已经根据二氧化硅层的厚度计算出了WSe ₂ / SiO ₂ / Si结构中的激光泵浦电场的分布。理论上证实了通过WSe ₂单层有效产生THz辐射的最佳结构几何形状的选择。