Abstract

Thin aluminum nitride (AlN) films on sapphire (Al₂O₃) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphire.

中文翻译：

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Al 2 O 3衬底上的AlN薄膜的离子束沉积

摘要

通过离子束沉积（IBD）在蓝宝石（Al ₂ O ₃）衬底上生长氮化铝（AlN）薄膜，并通过扫描电子显微镜，拉曼散射和光学透射光谱法进行研究。结果表明，IBD工艺参数（气体混合物组成，离子束能量和衬底温度）对蓝宝石上获得的AlN薄膜的形态，结构和光学性能的影响。