Abstract

Non-uniformities in the plasma parameters in a magnetized inductively coupled plasma (M-ICP) etcher were investigated. Further in text of this article the silicon dioxide and the photoresist are called as abbreviations the oxide and the PR accordingly. The etch results of an oxide and PR were correlated with the non-uniformity characteristics of the plasma parameters. The plasma density non-uniformities and the oxide etch-rate non-uniformities in M-ICP-V (9.28 and 2.4%, respectively) were lower than those in M-ICP-A (14.6% and 21.4%, respectively) or ICP (13.03 and 5.2%, respectively). The profile angle of the etched silicon dioxide in ICP, M-ICP-A, and M-ICP-V configurations were also measured and the angle in M-ICP-V was approximately 85° and similar in ICP.

中文翻译：

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磁化电感耦合等离子体的均匀性研究

摘要

研究了磁化电感耦合等离子体（M-ICP）蚀刻机中等离子体参数的不均匀性。此外，在本文的文本中，二氧化硅和光致抗蚀剂相应地简称为氧化物和PR。氧化物和PR的蚀刻结果与等离子体参数的非均匀性特征相关。M-ICP-V（分别为9.28和2.4％）的等离子体密度不均匀度和氧化物蚀刻速率不均匀度低于M-ICP-A（分别为14.6％和21.4％）或ICP的等离子体密度不均匀度和氧化物蚀刻速率不均匀度（分别为13.03和5.2％）。还测量了在ICP，M-ICP-A和M-ICP-V配置中蚀刻的二氧化硅的轮廓角，并且在M-ICP-V中的角度约为85°，在ICP中相似。